Impact of Sb Variation and Electric Field on InAs/Ga(As)Sb Superlattice Structures

Source
IEEE Electron Devices Technology and Manufacturing Conference Strengthening the Globalization in Semiconductors Edtm 2024
Date Issued
2024-01-01
Author(s)
Yadav, Megha
Barnwal, Akshat
Reddy, Naga Sheshu
Kumar, Priyesh
DOI
Abstract
This work presents the analysis of wavefunctions and miniband-formation in a 150-well InAs/GaAs_1-x Sb_x based superlattice structure. A type-I to type-II transition is observed at an Sb mole fraction (x) of 0.15, which facilitates the use of the same material-based structures to accommodate multiple applications in light emission and detection. Further, the effects of an applied electric field on the band diagram and electron wave-functions were studied.
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URI
Subjects
Electric Field | Minibands | Type-I/II Superlattice | Wave-functions