Repository logo
  • English
  • العربية
  • বাংলা
  • Català
  • Čeština
  • Deutsch
  • Ελληνικά
  • Español
  • Suomi
  • Français
  • Gàidhlig
  • हिंदी
  • Magyar
  • Italiano
  • Қазақ
  • Latviešu
  • Nederlands
  • Polski
  • Português
  • Português do Brasil
  • Srpski (lat)
  • Српски
  • Svenska
  • Türkçe
  • Yкраї́нська
  • Tiếng Việt
Log In
New user? Click here to register.Have you forgotten your password?
  1. Home
  2. Scholalry Output
  3. Publications
  4. An Indigenous Low-Cost Robust BiCMOS Process Flow for NavIC Applications
 
  • Details

An Indigenous Low-Cost Robust BiCMOS Process Flow for NavIC Applications

Source
2022 IEEE International Conference on Emerging Electronics Icee 2022
Date Issued
2022-01-01
Author(s)
Maheshwari, Om
Katiyar, Ravins
Dasgupta, Amitava
Chakravorty, Anjan
Nair, Deleep R.
Mohapatra, Nihar R.  
DOI
10.1109/ICEE56203.2022.10118318
Abstract
A low-cost BiCMOS process integrable with Semi-Conductor Laboratory's (SCL's) 180 nm CMOS process flow is developed for designing indigenous application-specific integrated circuits (ASICs) for Indian regional satellite navigation system NavIC. The process is optimized for realizing high frequency (HF) as well as high voltage (HV) double polysilicon bipolar junction transistors and is robust to process variations. The designed HF device has fT/fmax 29/50 GHz, and the HV device has a breakdown voltage of 10 V.
Unpaywall
URI
https://d8.irins.org/handle/IITG2025/27132
Subjects
BiCMOS Process | Double Polysilicon BJT | IRNSS | Low-Cost | NavIC | Robust
IITGN Knowledge Repository Developed and Managed by Library

Built with DSpace-CRIS software - Extension maintained and optimized by 4Science

  • Privacy policy
  • End User Agreement
  • Send Feedback
Repository logo COAR Notify