RHSCC-16T: Radiation Hardened Sextuple Cross Coupled Robust SRAM Design for Radiation Prone Environments

The vulnerability of radiation-induced Single Node Upset (SNU) and Double Node Upset (DNU) on SRAM increase at lower technology nodes. Various state-of-the-art solutions, such as Quatro-10T, DICE cell, etc., have been proposed. Quatro-10T recovers from SNU using the negative feedback networks connected to storage nodes. However, Quatro-10T is not entirely immune to SNU. DICE cell is resistant to SNU, but the design suffers from DNU. In this paper, we propose a Radiation Hardened Sextuple Cross Coupled-16T (RHSCC-16T) SRAM, which is immune to SNU for all the cases and DNU for many cases with less area requirement as compared to DICE cell. In addition, it gives better read access time, write access time, read static noise margin, and wordline write trip voltage than many compared SRAMs. The proposed design possesses 1.54 ×, 1.54 ×, 1.54×, and 1.36× shorter read access time than STD-6T, Quatro-10T, RHM-12T, and RSP-14T. It also exhibits 11.25 ×, and 1.03 × higher read static noise margin than RHM-12T ×and STD-6T and 2.01× higher wordline write trip voltage than Quatro-10T@VDD = 0.9 V at CMOS 28nm Technology.