Radio Frequency Performance of High Mobility 2D Monolayer Au2S-based Transistors

In this paper, we propose a novel two-dimensional (2D) monolayer Au2 S radio-frequency (RF) transistor that promises a significantly high effective mobility value. The RF performance of monolayer Au2 S-based transistors is evaluated against conventional 2D monolayer MoS2 RF transistors using circuit-level simulations. The intrinsic material-to-device electrical characteristics are obtained from ab initio linearized Boltzmann and quantum transport simulations, while the external parasitics of a RF test structure are extracted by calibrating the circuit model with the experimentally reported RF MoS2 transistors. We show that Au2 S RF transistors have ∼ 3x higher intrinsic and ∼2.7x higher extrinsic short-circuit current gain cut-off frequencies than the MoS2 RF transistors.