Charge and capacitance modeling of III-V double gate field effect transistors

Mohapatra, Nihar RanjanChandran, Sarath G.M.Sarath G.M.Chandran2025-09-042025-09-042019-01-01https://d8.irins.org/handle/IITG2025/32175ill.; 30 cm.17210092Electrical EngineeringMoore's LawIG-DGFETMulti-gate FETShort Channel EffectsFermi-Dirac StatisticsCharge and capacitance modeling of III-V double gate field effect transistorsM.Techix, 60p.M.Tech123456789/500