Surana, NeelamNeelamSuranaKaur, RaminderRaminderKaurMekie, JoyceeJoyceeMekie2025-08-302025-08-302017-10-31[9781509043668]10.1109/RADECS.2016.80931692-s2.0-85043604252https://d8.irins.org/handle/IITG2025/23008We propose a novel short and deep drain (SDD) MOSFET structure and SDD based circuits that are suitable for space applications. The 3-D TCAD simulations for heavy ion radiation with LET of 10 MeV-cm²/mg have been carried out on both SDD MOSFET and SDD inverter. From TCAD simulations, we observe that SET magnitude in SDD inverter is reduced by 43% by using shorter drain and by 17% by using deeper drain compared to conventional MOSFET inverter if the areas of both designs are kept the same. Further, a detailed TCAD simulation on inverter design also showed that SDD inverter has similar power and delay values as those of the conventional MOSFET if areas are the same.false3-D TCAD | heavy ion radiation | mixed-mode simulation | MOSFETs | Single Event Transient(SET)Conference Paper1-431 October 20171cpConference Proceeding1