Saurabh, NishantNishantSaurabhPatil, ShubhamShubhamPatilMeihar, ParitoshParitoshMeiharKumar, SandeepSandeepKumarSharma, AnandAnandSharmaKamaliya, Bhavesh KumarBhavesh KumarKamaliyaMote, Rakesh G.Rakesh G.MoteLashkare, SandipSandipLashkareLaha, ApurbaApurbaLahaDeshpande, VeereshVeereshDeshpandeGanguly, UdayanUdayanGanguly2025-08-312025-08-312024-11-1510.1016/j.tsf.2024.1405592-s2.0-85207769063https://d8.irins.org/handle/IITG2025/28659In this work, we understand the post-deposition anneal temperature effects on structural and electrical (leakage current and trap density) properties of epitaxial Gd<inf>2</inf>O<inf>3</inf> film grown on Si (111) substrate using a cost-effective and High-Volume Manufacturing capable radio frequency sputtering method. It is found that the Rapid Thermal Annealing (RTA) at an optimum temperature of 850 °C enhances the crystallinity of the cubic phase in film. However, at higher RTA temperatures (>900 °C to 1050 °C), Si out-diffusion in Gd<inf>2</inf>O<inf>3</inf> film is manifested as the reason for phase evolution towards the amorphous phase. The electrical characterization shows the film's low leakage current density of 100 nA/cm². Moreover, increased breakdown voltage and field are observed with increasing RTA temperature. The frequency-dependent Capacitance-Voltage analysis shows a parallel shift accompanied by a kink at a lower frequency, indicating the presence of interface traps (D<inf>it</inf>) with a range of time constants. After the forming gas annealing, a significant reduction in D<inf>it</inf> is observed. The low leakage current density, low D<inf>it</inf> and high crystallinity make Gd<inf>2</inf>O<inf>3</inf> a promising candidate as a buried oxide in Silicon on Insulator MOSFETs.falseCapacitance-voltage | Epitaxial thin film | Gadolinium(III) oxide | Interface traps | Phase transformation | Silicon on insulator | SputteringArticle15 November 20240140559arJournal0WOS:001349307500001