Dehury, Ranjit KumarRanjit KumarDehuryGautam, AbhayAbhayGautamBehera, RakeshRakeshBeheraRashid, AbiraAbiraRashidBapat, RudheerRudheerBapatPaliwal, ManasManasPaliwal2025-08-312025-08-312024-06-0110.1016/j.matchar.2024.1139982-s2.0-85194489389https://d8.irins.org/handle/IITG2025/28905In this work, physical vapor deposition was used to grow dual-phase high entropy alloy films. The near equiatomic films of CoCrFeMnNi were grown on a freshly cleaved (100) surface of a NaCl substrate. The deposition was carried out at a substrate temperature ranging from −143 °C to 600 °C. The films grown at cryogenic temperatures were completely amorphous while dual- phase microstructure was observed in films grown at room temperature and above. The dual phase consisted of an amorphous and a crystalline domain when grown at room temperature. However, for growth temperatures of 200 °C and above the dual-phase microstructure consisted of compositionally equivalent fcc and hcp phases. In a narrow temperate range of 400–450 °C a partial epitaxy appeared, suggesting the possibility of growing crystallographically oriented films of the high entropy alloys under more refined growth conditions.falseAmorphous | Dual-phase alloy | Epitaxy | High entropy alloy | Physical vapor deposition | Thin filmsArticleJune 20241113998arJournal1WOS:001249147500001