Ganeriwala, Mohit D.Mohit D.GaneriwalaYadav, ChandanChandanYadavMohapatra, Nihar R.Nihar R.MohapatraKhandelwal, SourabhSourabhKhandelwalHu, ChenmingChenmingHuChauhan, Yogesh SinghYogesh SinghChauhan2025-08-302025-08-302016-11-0110.1109/JEDS.2016.25861162-s2.0-84994187891https://d8.irins.org/handle/IITG2025/21813In this paper, we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a compact model is needed for their circuit simulation. The model presented in this paper addresses this need and is completely explicit and computationally efficient which makes it highly suitable for SPICE implementation. The proposed model is verified against the numerical solution of coupled Schrödinger-Poisson equation for FinFET with various channel thickness and effective mass.truedensity of states (DOS) | FinFET | III-V | quantum capacitance | SPICEArticlehttps://doi.org/10.1109/jeds.2016.258611621686734396-401November 2016147526302arJournal12