Ganeriwala, Mohit D.Mohit D.GaneriwalaRuiz, Francisco G.Francisco G.RuizMarin, Enrique G.Enrique G.MarinMohapatra, Nihar R.Nihar R.Mohapatra2025-08-312025-08-312020-04-01[9781728125381]10.1109/EDTM47692.2020.91180022-s2.0-85091977005https://d8.irins.org/handle/IITG2025/24182Small Γ-L valley energy offset in III-V materials such as GaAs is shown to improve the transistor performance, overcoming the density of states bottleneck while maintaining high injection velocity. Existing compact models for III-V channel transistors only account for the dominant Γ-valley charges. This underestimates the transistors circuit performance. In this work, for the first time, a compact model is introduced to include the L-valley charges in III-V GAA transistor electrostatics. The quantum mechanical effects arising because of the highly confined GAA geometry is also included. The proposed model is compared with the data obtained from 2D Poisson-Schrodinger solver for different III-V channel materials and dimensions and found to be in excellent agreement.falsecharge centroid | compact model | GAA transistor | III-V semiconductor | L-valley | quantum capacitance | transistor electrostatics | Γ valleyConference PaperApril 202009118002cpConference Proceeding0