Ganeriwala, Mohit D.Mohit D.GaneriwalaMarin, Enrique G.Enrique G.MarinRuiz, Francisco G.Francisco G.RuizMohapatra, Nihar R.Nihar R.Mohapatra2025-08-302025-08-302018-05-03[9781538648117]10.1109/ULIS.2018.83547672-s2.0-85050951865https://d8.irins.org/handle/IITG2025/22863In this paper, we present a computationally efficient compact model for calculating the charges and gate capacitance of III-V cylindrical nanowire transistors. We proposed an approximation which decouples the Poisson and the Schrödinger equation and addresses the issues of developing a computationally efficient analytical model. Using the proposed approximation, we derived a model suitable for the circuit simulators. The model is physics based and does not include any empirical parameters. The accuracy of the model is verified across nanowires of different sizes and materials using simulation results from a 2D Poisson-Schrodinger solver.falseConference Paper1-33 May 20182cpConference Proceeding1