Process-induced uniaxial strain in Nanosheet-FET based CMOS technology-is it still beneficial?

Kaur, RamandeepRamandeepKaurMohapatra, Nihar RanjanNihar RanjanMohapatra2025-09-042025-09-042023-03-07https://d8.irins.org/handle/IITG2025/30835en-USProcess-induced uniaxial strain in Nanosheet-FET based CMOS technology-is it still beneficial?Conference PaperConference Paper123456789/493