Yadav, MeghaMeghaYadavBarnwal, AkshatAkshatBarnwalReddy, Naga SheshuNaga SheshuReddyKumar, PriyeshPriyeshKumarSaha, JhumaJhumaSaha2025-08-312025-08-312024-01-01[9798350371529]10.1109/EDTM58488.2024.105119632-s2.0-85193253227https://d8.irins.org/handle/IITG2025/29099This work presents the analysis of wavefunctions and miniband-formation in a 150-well InAs/GaAs_1-x Sb_x based superlattice structure. A type-I to type-II transition is observed at an Sb mole fraction (x) of 0.15, which facilitates the use of the same material-based structures to accommodate multiple applications in light emission and detection. Further, the effects of an applied electric field on the band diagram and electron wave-functions were studied.falseElectric Field | Minibands | Type-I/II Superlattice | Wave-functionsConference Paper20240cpConference Proceeding0