Kaur, RamandeepRamandeepKaurMohapatra, Nihar R.Nihar R.Mohapatra2025-08-312025-08-312023-01-01[9798350332520]10.1109/EDTM55494.2023.101030292-s2.0-85158131428https://d8.irins.org/handle/IITG2025/26965This paper studies the effect of process-induced uniaxial strain on the performance of Gate-All-Around Nanosheet FETs (GAANS) using k.p and BTE simulations. It is shown that mobility and performance in confined n-type GAANS is limited by acoustic phonon and surface roughness scattering. The tensile channel stress enhances the performance to certain extent. The confined p-type GAANS exhibits very low mobility. The compressive channel stress although boosts hole mobility, could not fully revive performance of confined structures.falseband structure | effective mass | GAANS | mobility | process-induced strainConference Paper20232cpConference Proceeding1