Das, TanayTanayDasAhmad, NaefNaefAhmadSomappa, LaxmeeshaLaxmeeshaSomappaLashkare, SandipSandipLashkare2025-08-312025-08-312025-01-01[9798331504168]10.1109/EDTM61175.2025.110413182-s2.0-105010816430https://d8.irins.org/handle/IITG2025/28375A custom Electrostatic Discharge (ESD) protection circuit is essential for the reliability of 10-V neurostimulators implemented in a standard low-voltage CMOS process. The typical foundry-provided ESD diode cannot protect the ESD event without compromising on area. Here, we propose a custom ESD protection design in 65nm CMOS technology within the given area of 57 X 72 μm², limited to pad size. The dynamic resistance (R<inf>dyn</inf>) of the proposed design is 3Ω which is > 10X lower as compared to the foundry-provided design (31.93 Ω) providing substantially lower clamping voltage (~12V) than the oxide breakdown limit (16V).falseDynamic Resistance | Electrostatic DischargeConference Paper20250cpConference Proceeding0