Compact Modeling of LDMOS Transistors Over a Wide Temperature Range Including Cryogenics

MacHhiwar, YogendraYogendraMacHhiwarGill, GarimaGarimaGillKaushal, Kumari NeerajKumari NeerajKaushalMohapatra, Nihar R.Nihar R.MohapatraAgarwal, HarshitHarshitAgarwal2025-08-312025-08-312024-01-0110.1109/TED.2023.33261072-s2.0-85181560002https://d8.irins.org/handle/IITG2025/29165An improved compact model of high-voltage laterally diffused MOS (LDMOS) transistors valid over a wide temperature range including cryogenic is presented. The existing BSIM-BULK HV compact model is improved to include carrier freeze-out and field-assisted ionization models, which are key for the HV devices. In addition, temperature dependence of mobility, flat-band voltage, and saturation velocity models are also improved for application to cryogenic temperatures. The proposed model is implemented within the framework of the BSIM-BULK HV compact model and shows excellent capability in modeling experimental LDMOS transistor data for temperatures between 300 and 77 K.falseBSIM-BULK | carrier freeze-out | complementary metal-oxide-semiconductor (CMOS) | cryogenic | laterally diffused MOS (LDMOS) | semiconductor device modelingCompact Modeling of LDMOS Transistors Over a Wide Temperature Range Including CryogenicsArticle1557964677-831 January 20245arJournal4