Bhoir, Mandar S.Mandar S.BhoirMohapatra, Nihar R.Nihar R.Mohapatra2025-08-312025-08-312020-08-0110.1109/TED.2020.30028782-s2.0-85089346066https://d8.irins.org/handle/IITG2025/24055In this article, the combined effect of BOX thickness ( {T}_{\text {BOX}} ) and ground-plane (GP) doping ( {N}_{\text {GP}} ) on channel carrier mobility and analog figures of merit (FoMs) is investigated. It is reported that the thin BOX along with higher {N}_{\text {GP}} will limit the electron/hole mobility of ultrathin body and BOX fully depleted silicon-on-insulator (UTBB FD-SOI) MOS transistors. The physics responsible for this observation is discussed in detail. The contrasting behavior of different GPs, the effect of {T}_{\text {BOX}} scaling, and gate-length scaling on device behavior is also analyzed. It is also shown that in advanced UTBB FD-SOI MOS transistors, a tradeoff exists between transistor intrinsic gain, cutoff frequency, and non-linearity. In nMOS transistors, the best intrinsic gain and cut-off frequency can be achieved with ultrathin BOX and n-type GP (or with no GP), whereas the best linearity can be achieved with ultrathin BOX and p-type GP implant.falseGround plane | mobility | non-linearity | technology scaling | transconductance | ultrathin body and BOX fully depleted silicon-on-insulator (UTBB FD-SOI)Article155796463035-3041August 2020109123983arJournal10