Shukla, ShivamShivamShuklaManwani, KrishnaKrishnaManwaniPatel, Tvarit A.Tvarit A.PatelPanda, EmilaEmilaPanda2025-08-312025-08-312023-01-0110.1007/s10854-022-09672-x2-s2.0-85146603908https://d8.irins.org/handle/IITG2025/26989The study focuses on the development of novel transparent electrode for maximizing energy harvesting and performance of an optoelectronic device. Along with the high visible transparency (of 82%), this electrode has also ensured high near-infrared transparency of 88% that is substantially higher than the conventionally used Sn-doped In<inf>2</inf>O<inf>3</inf> (ITO), F-doped SnO<inf>2</inf> (FTO) and Al-doped ZnO (AZO). The film shows an electrical resistivity of 24.54 × 10^–3 Ω cm and a high electron concentration of 1.14 × 10²¹ cm⁻³. Moreover, this highly transparent visible/near-infrared Ta-doped TiO<inf>2</inf> electrode is realized on a glass substrate that has inferior quality as compared to its crystalline counterparts and hence cost-effective. Here, magnetron sputtering, one of the commercially viable deposition techniques, is used to synthesize this electrode, thus enabling huge commercialization possibilities.falseArticle1573482XJanuary 20234234arJournal3WOS:000961970800044