Kushwaha, PragyaPragyaKushwahaAgarwal, HarshitHarshitAgarwalChauhan, Yogesh S.Yogesh S.ChauhanBhoir, MandarMandarBhoirMohapatra, Nihar R.Nihar R.MohapatraKhandelwal, SourabhSourabhKhandelwalDuarte, Juan P.Juan P.DuarteLin, Yen KaiYen KaiLinChang, Huan LinHuan LinChangHu, ChenmingChenmingHu2025-08-302025-08-302016-12-15[9781509018307]10.1109/EDSSC.2016.77853042-s2.0-85010399692https://d8.irins.org/handle/IITG2025/22604The formulation of effective mobility for fully depleted silicon-on-insulator (FDSOI) transistors is a very challenging task. As vertical electric field (E<inf>eff</inf>) changes it's sign from positive to negative according to the front and back channel dominance which results in non-unique relationship between E<inf>eff</inf> and carrier distribution. This is the first time, when a predictive mobility model for wide range of back gate biases, solely dependent on technology parameters (front and back gate oxide thickness T<inf>ox</inf>/<inf>box</inf>, threshold voltage V<inf>th</inf>, front/back gate bias V<inf>fg</inf>/b<inf>g</inf> and flat-band voltage V<inf>fb</inf>) is proposed. This predictive mobility model allows the user to predict the deviation in device characteristics due to the variations in the device structure.falseFDSOI | Mobility | Model | Split-CVConference Paper448-45115 December 201667785304cpConference Proceeding6