Variability sources in nanoscale bulk FinFETs and TiTaN- a promising low variability WFM for 7/5nm CMOS nodes

Bhoir, Mandar S.Mandar S.BhoirChiarella, ThomasThomasChiarellaRagnarsson, Lars A.Lars A.RagnarssonMitard, JeromeJeromeMitardHoriguchi, NaotoNaotoHoriguchiMohapatra, Nihar R.Nihar R.Mohapatra2025-08-312025-08-312019-12-01[9781728140315]10.1109/IEDM19573.2019.89936602-s2.0-85081053514https://d8.irins.org/handle/IITG2025/24355A systematic methodology to segregate different variability sources from electrical measurements, in sub-10nm W<inf>fin</inf> FinFETs, is proposed. The threshold voltage variation, coming from gate-metal work-function and oxide charge variations, is shown to be the major contributor to in-wafer variability. The contribution of FER, GER and RDF to V<inf>t</inf> variability is negligible. TiTaN, a new work function metal (WFM) for the metal gate-stack, is introduced and it provides ~37% less total and ~27% less random variability.falseVariability sources in nanoscale bulk FinFETs and TiTaN- a promising low variability WFM for 7/5nm CMOS nodesConference PaperDecember 2019168993660cpConference Proceeding10