Singh, DushyantDushyantSinghV V, TharundevTharundevV VMaity, SubhaSubhaMaityGayakwad, DhammapriyDhammapriyGayakwadJörg Osten, H.H.Jörg OstenLodha, SaurabhSaurabhLodhaKhiangte, Krista R.Krista R.Khiangte2025-08-312025-08-312025-01-0110.1016/j.jcrysgro.2024.1279722-s2.0-85207694835https://d8.irins.org/handle/IITG2025/28589The article showcases a low-cost, low-temperature deposition and HVM technique to develop single crystalline GeSn alloy epilayers on Gd<inf>2</inf>O<inf>3</inf>/Si (111) substrate. First, GeSn alloy amorphous layer is deposited on the insulating substrates using an Radio Frequency (RF) sputtering apparatus. Subsequently, an inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) process is used to deposit a SiO<inf>2</inf> capping layer to protect against Sn out-diffusion during heat treatment. The samples are then subjected to solid phase epitaxy (SPE) at 450 °C, 550 °C, and 650 °C. Sample processed for SPE at 450 °C has weak crystallinity and only shows Type-A stacking. Those processed for SPE at 550 °C and 650 °C, on the other hand, have revealed formation of the single-crystalline GeSn alloy epilayer with Type-A and Type-B stacking. However, SPE at 650 °C revealed tin out-diffusion and segregation effects. This work is significant for enabling the preparation of high-Sn-content GeSn alloy epilayers on insulating Gd<inf>2</inf>O<inf>3</inf>/Si (111) substrates, as it requires the initial deposition of a GeSn amorphous alloy epilayer using RF sputtering. This advancement promises benefits which includes advantages such as lower operating voltage, reduced leakage current, and minimized parasitic and short-channel effects, making it ideal for advancing RF technology.falseEpitaxial growth | GeSn alloy | RF sputtering | Solid phase epitaxyArticle1 January 20250127972arJournal0WOS:001349408900001