Agarwal, Tarun KumarSrivastava, AyushAyushSrivastava2025-09-042025-09-042023-01-01https://d8.irins.org/handle/IITG2025/32303hbk.; 30 cm21250007Transition Metal Dichalcogenides (TMD)Field-Effect Transistors (FET)6T-SRAMRead-Static-Noise- Margin (RSNM)Stability analysis of monolayer TMD FET, Si FinFET, and Si NSFET based 6T SRAM for N5 and beyondM.Techxii, 57p.M.Tech123456789/500