Bhoir, Mandar S.Mandar S.BhoirChiarella, ThomasThomasChiarellaRagnarsson, Lars A.Lars A.RagnarssonMitard, JeromeJeromeMitardHoriguchi, NaotoNaotoHoriguchiMohapatra, Nihar R.Nihar R.Mohapatra2025-08-312025-08-312020-04-01[9781728125381]10.1109/EDTM47692.2020.91178152-s2.0-85091978539https://d8.irins.org/handle/IITG2025/24183In this work, we have studied the effect of threshold voltage (Vt) extraction methods on in-wafer variability of sub-10nm fin-width FinFETs. Using six different Vt extraction techniques, it is experimentally demonstrated that the Vt variability is independent of the extraction technique. The significant variation in work-function and oxide-charges compared to mobility and series-resistance is shown to be the reason behind these observations. It is also shown that the inferences drawn from this work will hold true even for future CMOS nodes.falseFinFET | process variability | threshold voltageConference PaperApril 202039117815cpConference Proceeding1