Compact electrostatics and transport model for high mobility iii-v channel gate-all-around MOS transistors
Source
Indian Institute of Technology, Gandhinagar
Date Issued
2020-01-01
Author(s)
Ganeriwala, Mohit D.
Subjects
13210026
Electrical Engineering
Semiconductor Materials
MOS Transistors
Circuit Simulators
Cross-sectional Geometries
