Charge and capacitance modeling of III-V double gate field effect transistors
Source
Indian Institute of Technology, Gandhinagar
Date Issued
2019-01-01
Author(s)
Chandran, Sarath G.M.
Subjects
17210092
Electrical Engineering
Moore's Law
IG-DGFET
Multi-gate FET
Short Channel Effects
Fermi-Dirac Statistics
