Polarized Raman analysis at low temperature to examine interface phonons in InAs/GaAs1-xSbx quantum dot heterostructures

An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The effect of Sb-content on the frequency positions of these phonon modes has been very well correlated with the simulated strain. The Raman peaks show different frequency shifts in the heterostructure with varying Sb-content in the capping layer. This shift is attributed to the strain relaxation, bigger size of quantum dots and type-II band alignment.