A Comprehensive analysis of Interlayer variabilities in double-channel AlGaN/GaN HEMT heterostructure

Source
IEEE Electron Devices Technology and Manufacturing Conference Strengthening the Globalization in Semiconductors Edtm 2024
Date Issued
2024-01-01
Author(s)
Kumar, Priyesh
DOI
Abstract
This research focuses on the impact of interlayer (IL) variabilities on the depth of the 2-Dimensional Electron Gas (2DEG) and strain distribution within a double-channel AlGaN/GaN High Electron Mobility Transistor (HEMT) heterostructure. We have explored IL variabilities in terms of their materials (A1N and BAIN), compositions, and thicknesses. It observed that BAIN has better 2DEG confinement as compared to A1N and it also enhances the 2DEG with increasing thickness and increasing mole fraction.
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Subjects
2DEG | AlN AlGaN | BAlN | GaN | HEMT | Heterostructure | Interlayer | Strain