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  4. Growth of dual-phase high entropy alloy films using thermal vapor deposition
 
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Growth of dual-phase high entropy alloy films using thermal vapor deposition

Source
Materials Characterization
ISSN
10445803
Date Issued
2024-06-01
Author(s)
Dehury, Ranjit Kumar
Gautam, Abhay  
Behera, Rakesh
Rashid, Abira
Bapat, Rudheer
Paliwal, Manas
DOI
10.1016/j.matchar.2024.113998
Volume
212
Abstract
In this work, physical vapor deposition was used to grow dual-phase high entropy alloy films. The near equiatomic films of CoCrFeMnNi were grown on a freshly cleaved (100) surface of a NaCl substrate. The deposition was carried out at a substrate temperature ranging from −143 °C to 600 °C. The films grown at cryogenic temperatures were completely amorphous while dual- phase microstructure was observed in films grown at room temperature and above. The dual phase consisted of an amorphous and a crystalline domain when grown at room temperature. However, for growth temperatures of 200 °C and above the dual-phase microstructure consisted of compositionally equivalent fcc and hcp phases. In a narrow temperate range of 400–450 °C a partial epitaxy appeared, suggesting the possibility of growing crystallographically oriented films of the high entropy alloys under more refined growth conditions.
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URI
https://d8.irins.org/handle/IITG2025/28905
Subjects
Amorphous | Dual-phase alloy | Epitaxy | High entropy alloy | Physical vapor deposition | Thin films
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