Multi-physics Modeling of Au/MoS2/Au Memristors combining Molecular Dynamics and Electro-thermal Simulations
Source
9th IEEE Electron Devices Technology and Manufacturing Conference Shaping the Future with Innovations in Devices and Manufacturing Edtm 2025
Date Issued
2025-01-01
Author(s)
Abstract
The state transition in Au/MoS<inf>2</inf>/Au memristor across several cycles is analysed in this work using a multi-physics modeling framework that combines electro-thermal Finite Element Method (FEM) and Reactive Molecular Dynamics (MD) simulations. MD simulations provide the field-driven realistic atomistic filament structure of HRS and LRS, while temperatures from FEM simulations are fed back into MD for state transitions. The framework demonstrates that the HRS is caused by constriction of the filament near the top Au and monolayer MoS<inf>2</inf> interface rather than complete filament rupture.
Subjects
2D materials and Reactive Molecular Dynamics | Electro-thermal Simulations | ReRAM