Area and Energy-Efficient Quantum Tunneling-Based Thermal Sensor on 45nm RFSOI Technology
Source
IEEE Transactions on Electron Devices
ISSN
00189383
Date Issued
2024-01-01
Author(s)
Patil, Shubham
Kadam, Abhishek
Sonawane, Jay
Deshmukh, Shreyas
Gaurav, R.
Kumar Singh, Ajay
Deshpande, Veeresh
Somappa, Laxmeesha
Ganguly, Udayan
Abstract
The compact and energy-efficient integrated temperature sensors are crucial for temperature monitoring and control. In this work, we propose a novel area and energy-efficient band-to-band tunneling (BTBT)-based oscillator for temperature sensing applications. It utilizes oscillation frequency as a metric for temperature sensing. The linearity in BTBT current with temperature can enable sensing with a simple readout mechanism. The initially designed circuit is simulated and analyzed in TCAD using mixed-mode simulation, followed by the fabrication of the proposed circuit using GF 45nm RFSOI technology. Measurements show the BTBT oscillator's quasi-linear response as a function of temperature. Our proposed work enables the area (0.32μm<sup>2</sup>) and energy-efficient temperature sensor (2.5 fJ/cycle) for the energy and area-constraint edge applications.
Subjects
Band-to-band tunneling (BTBT) | oscillator | SOI | TCAD mixed mode simulation | temperature sensor
