GBRHQ-14T: Gate-Boosted Radiation Hardened Quadruple SRAM Design

Radiations in space are very critical and may cause failure in the SRAM. Various state-of-the-art SRAMs, such as DICE, Quatro-10T, etc., are proposed to mitigate the failure of SRAM. However, the designs are still vulnerable to radiations causing soft errors. This work proposes a Gate Boosted Radiation Hardened Quadruple 14T SRAM with better Single Node Upset (SNU) and Double Node Upset (DNU) tolerance. It has very high read stability. On top of that, our proposed design outperforms in terms of RSNM, Read Access Time(RAT), Wordline Write Trip Voltage (WWTV), Write Access Time (WAT), and leakage power than most conventional designs. It has a maximum of 1.3x less RAT than SAR-14T, 2.63x more WWTV than Quatro-10T, 1.38× less WAT than Quatro-10T SRAM, and 1.32x less leakage power than SEA-14T SRAM respectively at VDD=0.9V, CMOS 28nm Technology.