Study of Self-Heating Effects in Silicon Nano-Sheet Transistors

Source
2018 IEEE International Conference on Electron Devices and Solid State Circuits Edssc 2018
Date Issued
2018-10-09
Author(s)
Chalia, G.
DOI
Abstract
The impact of Self-Heating Effect (SHE) on lateral Gate-All-Around (GAA) Nanosheet FET (NSFET) is numerically investigated by comparison of single and multi-channel NSFET with a single-channel FinFET. TCAD results show a 1.8% degradation in ON-current (I<inf>ON</inf>, for a NSFET in comparison to 2.4% for a FinFET with identical footprint and similar OFF-current (I<inf>off</inf>) values. Furthermore, by investigating the effect of geometry scaling on SHE, we conclude that NSFET exhibits better resilience to SHE in comparison to the FinFET.
Unpaywall
URI
Subjects
FinFET | Gate-all-around | Self heating | Silicon Nanosheet Transistors | Ultra scaled transistors