Stability analysis of monolayer TMD FET, Si FinFET, and Si NSFET based 6T SRAM for N5 and beyond
Source
Indian Institute of Technology, Gandhinagar
Date Issued
2023-01-01
Author(s)
Srivastava, Ayush
Subjects
21250007
Transition Metal Dichalcogenides (TMD)
Field-Effect Transistors (FET)
6T-SRAM
Read-Static-Noise- Margin (RSNM)
